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| e PTB 20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 935-960 MHz Class AB Characteristics 50% Collector Efficiency at 2.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 6 Output Power (Watts) 5 4 3 2 1 0 0.00 VCC = 24 V ICQ = 50 mA f = 960 MHz 200 09 LOT COD E 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) Package 20206 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 13.5 0.077 -40 to +150 13.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20009 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935-960 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935-960 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935-960 MHz, --all phase angles at frequency of test) Symbol Gpe C Min 9 50 -- Typ 10 -- -- Max 12 -- 30:1 Units dB % -- Typical Performance Gain & Efficiency vs. Frequency 13 12 (as measured in a broadband circuit) 80 68 56 44 11 10 9 8 920 VCC = 24 V ICQ = 50 mA Pout = 2.5 W 930 940 Gain (dB) 32 20 970 950 960 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98 2 Efficiency (%) Gain (dB) Efficiency (%) |
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